Why band gap of silicon is more than germanium?
The electrons in the silicon atoms are more tightly bound to the nucleus than the electrons of the germanium atom due to its small size. This is the reason why the band gap of silicon is more than that of germanium.
Does germanium have a band gap?
Abstract. Germanium (Ge) is a group-IV indirect band gap semiconductor but the difference between its direct and indirect band gap is only 140 meV.
Which has more energy gap silicon or germanium?
The energy gap in silicon is more than germanium because in an silicon atom, electrons are more tightly bound to the nucleus than the germanium atom electrons. This happens due to the smaller size of the silicon atom.
What is band gap value of silicon?
1.12 eV
Si (Silicon) has a band gap of 1.12 eV (electron volt). A semiconductor with a large value is called a wide-band-gap semiconductor.
Why does silicon have a small band gap?
Silicon and germanium have significantly weaker bonding between their atoms. This results in a smaller band gap. At room temperature, some of the electrons have enough energy to move into the conduction bands.
What is the band gap of Ge semiconductor at 300K?
0.66
Detailed Solution
| Semiconductor Materials | ||
|---|---|---|
| Material | Chemical Symbol | Bandgap Energy (eV) 300K |
| Germanium | Ge | 0.66 |
| Silicon | Si | 1.1 |
| Gallium Arsenide | GaAs | 1.4 |
What is the forbidden energy band for germanium and silicon?
It’s a space in which no electron states are occupying. Silicon and germanium are extensively used semiconductors. The energy band gaps of silicon and germanium are 1.1 eV and 0.7 eV respectively.
Why is is better than Ge?
The main reasons for silicon diodes to be preferred over germanium diodes are: Silicon diode is easier to produce than germanium diode due to the widespread availability of silicon. The silicon diode is less sensitive than the germanium diode, hence the operation of silicon diodes is stable with changes in temperature.